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| ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES SOT23-5 * High voltage * Low on-resistance * Fast switching speed * Low gate drive * Low threshold * SOT23-5 package variant engineered to increase spacing between high voltage pins. APPLICATIONS * Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120E5TA REEL SIZE (inches) 7 TAPE WIDTH (mm) 8mm embossed QUANTITY PER REEL 3,000 units N/C D N/C S DEVICE MARKING G * P120 PINOUT - TOP VIEW ISSUE 2 - SEPTEMBER 2006 1 ZXMP2120E5 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V DSS V GS LIMIT -200 20 -122 -0.7 -0.7 0.75 6 T j :T stg -55 to +150 UNIT V V mA A A W mW/C C Continuous Drain Current (V GS =10V; T amb =25C) (a) I D I DM Pulsed Drain Current (c) Pulsed Source Current (Body Diode) (c) Power Dissipation at T amb =25C Linear Derating Factor (a) I SM PD Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R JA VALUE 167 UNIT C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 2 - SEPTEMBER 2006 2 ZXMP2120E5 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V (BR)DSS V GS(th) I GSS I DSS -200 -1.5 -3.5 20 -10 -100 -300 28 50 V V nA A A mA mS I D =-1mA, V GS =0V I =-1mA, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V GS = 20V, V DS =0V V DS =-200 V, V GS =0 V DS =-160 V, V GS =0V, T=125C (2) V DS =-25 V, V GS =-10V VGS =-10V, I D =-150mA V DS =-25V,I D =-150mA On-State Drain Current (1) Static Drain-Source On-State Resistance Forward Transconductance DYNAMIC Input Capacitance (2) Output Capacitance (2) Reverse Transfer Capacitance (2) SWITCHING Turn-On Delay Time (2) (3) Rise Time (2)(3) Turn-Off Delay Time (2) (3) Fall Time (2)(3) (1)(2) (1) I D(on) R DS(on) g fs C iss C oss C rss 100 25 7 pF pF pF V DS =-25 V, V GS =0V, f=1MHz t d(on) tr t d(off) tf 7 15 12 15 ns ns ns ns V DD =-25V, I D =-150mA NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. ISSUE 2 - SEPTEMBER 2006 3 ZXMP2120E5 TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 4 ZXMP2120E5 CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 5 ZXMP2120E5 PACKAGE OUTLINE PAD LAYOUT DETAILS 0.95 0.375 1.06 0.042 2.2 0.087 0.65 0.025 Controlling dimensions are in millimeters. Approximate conversions are given in inches mm inches PACKAGE DIMENSIONS Millimeters DIM MIN. A A1 A2 b C D 0.90 0.90 0.20 0.09 2.70 MAX. 1.45 0.15 1.30 0.50 0.26 3.10 MIN. 0.0354 0.0354 0.0078 0.0035 0.1062 MAX. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 E E1 e e1 L a Inches DIM MIN. 2.20 1.30 MAX. 3.20 1.80 MIN. 0.0866 0.0511 MAX. 0.1181 0.0708 Millimeters Inches 0.95 REF 1.90 REF 0.10 0 0.60 30 0.0374 REF 0.0748 REF 0.0039 0 0.0236 30 (c) Zetex Semiconductors plc 2006 Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - SEPTEMBER 2006 6 |
Price & Availability of ZXMP2120E5
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